04786958 is referenced by 17 patents and cites 8 patents.

A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an electrically floating structure. The device is electrically isolated by layer of dielectric which allows it to be easily integrated with other circuit elements. The device can be controlled by low current and low positive voltages which provide for simpler interfacing and better electrical compatibility with other circuits in an automotive system. A method of manufacturing this device is also provided.

Title
Lateral dual gate thyristor and method of fabricating same
Application Number
6/931345
Publication Number
4786958
Application Date
November 17, 1986
Publication Date
November 22, 1988
Inventor
Jayant K Bhagat
Troy
MI, US
Agent
R J Wallace
Assignee
General Motors Corporation
MI, US
IPC
H01L 29/74
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