04784720 is referenced by 99 patents and cites 2 patents.

A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

Title
Trench etch process for a single-wafer RIE dry etch reactor
Application Number
730701
Publication Number
4784720
Application Date
July 8, 1987
Publication Date
November 15, 1988
Inventor
Monte A Douglas
Coppell
TX, US
Agent
Melvin Sharp
Douglas A Sorensen
Thomas W DeMond
Assignee
Texas Instruments Incorporated
TX, US
IPC
B05D 3/06
C03C 15/00
B44C 1/22
H01L 21/306
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