04778745 is referenced by 18 patents and cites 5 patents.

A method of detecting opaque defects on a reticle used to define die patterns during semiconductor device fabrication in which a comparison is made of reflected light levels between an image die containing the developed photo-sensitive resist of a top layer with a reference die which contains only previously formed layers. The comparison is limited to areas of the device where there is no image pattern formed by the resist. A defect is detected whenever there is a difference in the recorded levels detected during the comparison.

Title
Defect detection method of semiconductor wafer patterns
Application Number
7/29025
Publication Number
4778745
Application Date
March 23, 1987
Publication Date
October 18, 1988
Inventor
Pak K Leung
Kanata
CA
Agent
John E Mowle
Assignee
Northern Telecom
CA
IPC
G03C 5/00
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