04767494 is referenced by 104 patents and cites 9 patents.

A compound semiconductor thin film is formed by growing a plurality of molecular layers one over another. According to the present invention, while a carrier gas and a small quantity of hydride containing an element in Group V or VI are normally flowed, an organometallic compound which is diluted with hydrogen and which contains an element in Group III or II and a hydride which is diluted with hydrogen and which contains an element in Group V or VI are alternately introduced over a substrate so that an atomic layer of an element in Group III or II and an atomic layer of an element in Group V or VI are alternately grown over the substrate. According to this method, grown layers having a high degree of purity can be obtained. A portion such as a Ga-Ga two-layer structure formed in the growth of a surface of an element in Group III or II can easily be eliminated by the introduction of a hydrogen halide so that the surface defects and deep levels are significantly decreased and perfect crystals can be obtained. According to the present invention, a high-concentration doping of a III-V compound semiconductor becomes possible. The method of the present invention is advantageous in the fabrication of high-speed FETs and multi-quantum-well lasers using compound semiconductors.

Title
Preparation process of compound semiconductor
Application Number
6/909287
Publication Number
4767494
Application Date
September 19, 1986
Publication Date
August 30, 1988
Inventor
Yoshiji Horikoshi
Akishima
JP
Toshiki Makimoto
Tokorozawa
JP
Naoki Kobayashi
Iruma
JP
Agent
Spencer & Frank
Assignee
Nippon Telegraph & Telephone Corporation
JP
IPC
C30B 25/02
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