04757363 is referenced by 42 patents and cites 26 patents.

An input resistor-diode protection circuit having an input resistor formed by a high impurity region within a deeper low impurity region, both a first conductivity type and input diode formed by the junction of the low impurity resistor region and the substrate along a substantial portion and a high impurity region overlapping the low impurity region at the output end of the resistor-diode circuit, both of a second conductivity type. A bipolar transistor connected to the output of the resistor in parallel to the diode also provides protection. A pair of concentric guard rings of first and second conductivity type laterally encompasses the input protection circuit.

Title
ESD protection network for IGFET circuits with SCR prevention guard rings
Application Number
650549
Publication Number
4757363
Application Date
October 3, 1986
Publication Date
July 12, 1988
Inventor
W Ronald Young
Palm Bay
FL, US
Michael A Bohm
Palm Bay
FL, US
Agent
Barnes & Thornburg
Assignee
Harris Corporation
FL, US
IPC
H01L 29/78
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