04707721 is referenced by 26 patents and cites 3 patents.

A passivated dual dielectric gate system compatible with low temperature processing utilizes a dual dielectric system with a silicon dioxide dielectric film or layer at the monocrystalline substrate surface, or termination. The dual dielectric system includes a dielectric film at the substrate surface of thicknesses of from 200 to 1000 .ANG.(or greater ). Respective layers of undoped amorphous silicon and titanium nitride overlie the top of the silicon dioxide and an aluminum gate metal layer overlies the titanium nitride layer. The structure can be patterned by selectively patterning photoresist and a dry or dry/wet etch processses. The structure is patterned and etched as desired. The system has enhanced surface mobilities due to lower oxide fixed charge density and smoother, more abrupt dielectric/monocrystalline interface region, is applicable to wide variety of MOSFET applications, and is inherently less electrostatic discharge (ESD) sensitive than conventional gate structures due to the distributed electric field.

Title
Passivated dual dielectric gate system and method for fabricating same
Application Number
6/831379
Publication Number
4707721
Application Date
February 20, 1986
Publication Date
November 17, 1987
Inventor
Patrick A Curran
Plano
TX, US
Saw T Ang
Garland
TX, US
Agent
Melvin Sharp
N Rhy Merrett
Gary C Honeycutt
Assignee
Texas Instruments Incorporated
TX, US
IPC
H01L 29/46
H01L 29/14
H01L 29/04
H01L 29/78
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