04698787 is referenced by 266 patents and cites 5 patents.

An electrically erasable programmable memory device which is programmable in the manner of an EPROM and erasable in the manner of an EEPROM. A dielectric layer between the control gate and the floating gate is provided having a high dielectric constant. A thin, uniform gate dielectric layer is provided which demonstrates minimal trapping. Finally, an asymmetrical source/drain junction is provided wherein the source includes a shallow portion and a deeper portion, which deeper portion defines the overlap between the source and the floating gate. In the preferred embodiment the dielectric between the control gate and the floating gate comprises tantalum pentoxide, the thin dielectric layer comprises oxynitride, and the deep diffusion portion of the source comprises phosphorous.

Title
Single transistor electrically programmable memory device and method
Application Number
6/673946
Publication Number
4698787
Application Date
November 21, 1984
Publication Date
October 6, 1987
Inventor
Thomas Chang
Santa Clara
CA, US
Satyen Mukherjee
San Jose
CA, US
Agent
Limbach Limbach & Sutton
Assignee
Exel Microelectronics
CA, US
IPC
G11C 11/34
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