04698104 is referenced by 48 patents and cites 13 patents.

A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon the substrate, a dopant carrier layer comprising an amorphous semiconductor material having a predetermined dopant concentration, controlling the thickness of the dopant carrier layer, and driving the dopant atoms out of the amorphous semiconductor dopant carrier layer into the selected areas of the semiconductor substrate by means of a controlled elevated temperature anneal.

Title
Controlled isotropic doping of semiconductor materials
Application Number
678946
Publication Number
4698104
Application Date
March 2, 1987
Publication Date
October 6, 1987
Inventor
John C Knights
Palo Alto
CA, US
Chuang C Tsai
San Jose
CA, US
Robert A Barker
Mountain View
CA, US
Agent
Serge Abend
Assignee
Xerox Corporation
CT, US
IPC
H01L 21/385
View Original Source