04665418 is referenced by 25 patents and cites 8 patents.

A semiconductor memory device includes n.sup.+ -type first and second semiconductor regions which are separately formed in the surface area of a p-type semiconductor substrate, a floating gate and a control gate. The second semiconductor region acting as a drain in a data readout mode is composed of a main portion, and an additional portion having an impurity concentration lower than that of the main portion and formed in contact with the main portion and a channel region.

Title
Semiconductor memory device
Application Number
6/563101
Publication Number
4665418
Application Date
December 16, 1983
Publication Date
May 12, 1987
Inventor
Yoshihisa Mizutani
Tokyo
JP
Agent
Finnegan Henderson Farabow Garrett & Dunner
Assignee
Tokyo Shibaura Denki Kabushiki Kaisha
JP
IPC
G11C 11/34
H01L 29/78
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