04657777 is referenced by 53 patents and cites 2 patents.

A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si.sub.n X.sub.2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.

Title
Formation of deposited film
Application Number
682367
Publication Number
4657777
Application Date
January 22, 1986
Publication Date
April 14, 1987
Inventor
Isamu Shimizu
Yokohama
JP
Junichi Hanna
Yokohama
JP
Shunichi Ishihara
Ebina
JP
Masaaki Hirooka
Toride
JP
Agent
Fitzpatrick Cella Harper & Scinto
Assignee
Canon Kabushiki Kaisha
JP
IPC
B05D 3/06
View Original Source