04637895 is referenced by 162 patents and cites 4 patents.

Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

Title
Gas mixtures for the vapor deposition of semiconductor material
Application Number
6/718661
Publication Number
4637895
Application Date
April 1, 1985
Publication Date
January 20, 1987
Inventor
James Kulman
Detroit
MI, US
Jeffrey Fournier
St. Clair Shores
MI, US
Chi C Yang
Troy
MI, US
Prem Nath
Rochester
MI, US
Subhendu Guha
Clawson
MI, US
Stanford R Ovshinsky
Bloomfield Hills
MI, US
Agent
Ronald W Citkowski
Marvin S Siskind
Assignee
Energy Conversion Devices
MI, US
IPC
C09K 11/07
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