04636401 is referenced by 56 patents and cites 7 patents.

An apparatus for conducting chemical vapor deposition reduced pressure, comprising: means for feeding reactive gases; a reaction vessel for depositing a film layer from the reactive gases by application of thermal energy, light energy or electric energy singly or in combination; an exhaust means for exhausting unnecessary reactive gases and unnecessary reaction products from the reaction vessel and for vacuumizing or reducing pressure of the reaction vessel, including a turbo molecular pump and a pressure control valve interposed between the reaction vessel and a roughing rotary pump; and a method of chemical vapor deposition using such apparatus.

Title
Apparatus for chemical vapor deposition and method of film deposition using such deposition
Application Number
6/701738
Publication Number
4636401
Application Date
February 14, 1985
Publication Date
January 13, 1987
Inventor
Minoru Miyazaki
Tokyo
JP
Mamoru Tashiro
Tokyo
JP
Shunpei Yamazaki
Tokyo
JP
Agent
Ronni S Malamud
Michael P Hoffman
Gerald J Ferguson Jr
Assignee
Semiconductor Energy Laboratory
JP
IPC
C23C 13/08
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