04612465 is referenced by 23 patents and cites 2 patents.

Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Split gate electrodes in the notch proximate the channels control bidirectional conduction, and are at non-common potentials in the OFF state to increase breakdown voltage. Self-shielding of the gates is also disclosed to further increase OFF state breakdown voltage.

Title
Lateral bidirectional notch FET with gates at non-common potentials
Application Number
390473
Publication Number
4612465
Application Date
May 13, 1985
Publication Date
September 16, 1986
Inventor
James A Benjamin
Waukesha
WI, US
Robert W Lade
Milwaukee
WI, US
Herman P Schutten
Whitefish Bay
WI, US
Agent
Andrus Sceales Starke & Sawall
Assignee
Eaton Corporation
OH, US
IPC
H03K 17/687
View Original Source