04602267 is referenced by 34 patents and cites 8 patents.

A protection element responsible for protecting a semiconductor element included in a semiconductor device from a voltage higher than the voltage which the semiconductor element is allowed to receive, the protection element virtually being a lateral bipolar transistor, in which an improvement is made to increase the voltage at which the protection element operates. The improvement being realized by separating the emitter from a region containing an impurity at a high concentration and which is a portion of the base of the lateral bipolar transistor.

Title
Protection element for semiconductor device
Application Number
6/346224
Publication Number
4602267
Application Date
February 5, 1982
Publication Date
July 22, 1986
Inventor
Takehide Shirato
Hiratsuka
JP
Agent
Staas & Halsey
Assignee
Fujitsu
JP
IPC
H01L 27/04
H01L 29/90
H01L 29/72
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