04590024 is referenced by 6 patents and cites 6 patents.

An improved process is disclosed for the deposition in a reactor vessel of silicon on the interior walls of the reactor vessel and for the subsequent separation of the silicon from those walls. The reactor vessel has a generally rectangular cross section and is formed of a refractory material from which the deposited silicon separates by thermal expansion shear separation during cool down of the vessel and the deposited silicon. To improve the output of the deposition system, a plurality of partitions are provided in the reactor vessel and integral with the reactor walls. These partitions act as additional deposition surfaces, increasing the number of silicon sheets deposited as well as increasing the efficiency of the chemical reaction.

Title
Silicon deposition process
Application Number
6/594456
Publication Number
4590024
Application Date
March 29, 1984
Publication Date
May 20, 1986
Inventor
Kalluri R Sarma
Mesa
AZ, US
M John Rice Jr
Tempe
AZ, US
Israel A Lesk
Phoenix
AZ, US
Agent
John A Fisher
Assignee
Solavolt International
TX, US
IPC
B29C 13/00
View Original Source