04589193 is referenced by 43 patents and cites 8 patents.

Disclosed is the use of metal silicide (e.g. Pt-Si) contacts in boron lightly doped P.sup.- type silicon between two contiguous but not adjacent N.sup.+ type regions instead of employing the usual P.sup.+ implanted or diffused channel stoppers. The invention finds a particularly interesting application in polyimide filled deep trench isolated integrated circuits.

The trench sidewalls are coated with an insulating material which is removed from the trench bottom at the all contact etch step. The Pt-Si is formed at the bottom of the trenches at the same time that the device contacts are made.

Title
Metal silicide channel stoppers for integrated circuits and method for making the same
Application Number
6/626278
Publication Number
4589193
Application Date
June 29, 1984
Publication Date
May 20, 1986
Inventor
Robert T Villetto Jr
Poughkeepsie
NY, US
Thomas A Hansen
Poughkeepsie
NY, US
George R Goth
Poughkeepsie
NY, US
Agent
Robert J Haase
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/94
H01L 21/76
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