04564576 is referenced by 19 patents and cites 5 patents.

A polymer having allyl groups each attached to a silicon atom serves as a resist material which is highly resistive to dry etching such as reactive sputter etching with oxygen and sensitive to electron beams, X-rays and deep UV rays. By the addition of a bis-azide compound known as a photosensitive cross-linking agent the resist material becomes sensitive also to UV and near UV rays. A very suitable polymer is obtained by polymerizing either a triallylsilane or an allylsilylstyrene or by copolymerizing an allylsilylstyrene with another ethylenic compound copolymerizable with styrene. This resist material is used in a pattern forming method of the two-layer type, in which a fine pattern is generated in a thin film of the resist material by lithography and then transferred into an underlying thick organic layer by dry etching of the thick organic layer with the resist pattern as a mask.

Title
Resist material comprising polymer of allylsilyl compound and pattern forming method using the resist material
Application Number
6/612925
Publication Number
4564576
Application Date
May 22, 1984
Publication Date
January 14, 1986
Inventor
Masayoshi Suzuki
Tokyo
JP
Kazuhide Saigo
Tokyo
JP
Agent
Burns Doane Swecker & Mathis
Assignee
NEC Corporation
JP
IPC
C08F 30/08
G03C 5/16
G03C 1/70
G03C 1/68
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