04546367 is referenced by 33 patents and cites 4 patents.

Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Gate electrode means in the notch proximate the channels controls bidirectional conduction.

Title
Lateral bidirectional notch FET with extended gate insulator
Application Number
6/390473
Publication Number
4546367
Application Date
June 21, 1982
Publication Date
October 8, 1985
Inventor
James A Benjamin
Waukesha
WI, US
Robert W Lade
Fort Myers
FL, US
Herman P Schutten
Milwaukee
WI, US
Agent
Andrus Sceales Starke & Sawall
Assignee
Eaton Corporation
OH, US
IPC
H01L 29/78
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