04528211 is referenced by 9 patents and cites 12 patents.

A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.

Title
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
Application Number
6/548712
Publication Number
4528211
Application Date
November 4, 1983
Publication Date
July 9, 1985
Inventor
Jayant K Bhagat
Troy
MI, US
Agent
Robert J Wallace
Assignee
General Motors Corporation
MI, US
IPC
H01L 21/318
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