04526632 is referenced by 15 patents and cites 14 patents.

A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in a Zn atmosphere to produce an n type region. Crystal growth is conducted while controlling the vapor pressure of the constituent Group IVB element to produce a p type region. A combination of all these steps gives a more stable pn junction.

Title
Method of fabricating a semiconductor pn junction
Application Number
270817
Publication Number
4526632
Application Date
February 9, 1983
Publication Date
July 2, 1985
Inventor
Yasuo Okuno
Sendai
JP
Kazuomi Ito
Ashikaga
JP
Jun ichi Nishizawa
Sendai
JP
Agent
Cushman Darby & Cushman
Assignee
Jun Ichi Nishizawa
JP
IPC
H01L 21/223
H01L 21/208
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