04513308 is referenced by 142 patents and cites 13 patents.

A Field Emitter Array comprising a semiconductor substrate with an emitter urface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I.sub.max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I.sub.max =j.sub.sat X A.sub.p-n, j.sub.sat being the saturation current density and A.sub.p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating an electric field that induces the emission of the electron current from the emitter tips.

Title
p-n Junction controlled field emitter array cathode
Application Number
6/421766
Publication Number
4513308
Application Date
September 23, 1982
Publication Date
April 23, 1985
Inventor
Henry F Gray
Alexandria
VA, US
Richard F Greene
Bethesda
MD, US
Agent
Charles E Krueger
William T Ellis
Robert F Beers
Assignee
The United States of America represented by the Secretary of the Navy
DC, US
IPC
H01L 27/12
H01L 29/34
H01L 29/06
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