04484210 is referenced by 32 patents and cites 3 patents.

A solid-state imaging device has a semiconductor substrate of one conductive type. A plurality of light-charge converter regions, of the opposite conductivity type, are formed in the semiconductor substrate. A charge-voltage converter region, formed in the semiconductor substrate, converts the electric charge produced by the light-charge converter regions into a voltage. At least one charge transfer section is formed in the semiconductor substrate for transferring the electric charge produced by the light-charge converter regions to the charge-voltage converter region. At least one charge transfer gate section is in the semiconductor substrate and has a gate electrode for controlling the timing of a transfer of the electric charges from the light-charge converter regions to the charge transfer section. Pulses are generated with a predetermined pulse potential and applied to the gate electrode in the charge transfer gate section. The predetermined pulse potential has the relationship

Title
Solid-state imaging device having a reduced image lag
Application Number
6/297759
Publication Number
4484210
Application Date
August 31, 1981
Publication Date
November 20, 1984
Inventor
Yasuo Ishihara
Tokyo
JP
Nobukazu Teranishi
Tokyo
JP
Hiromitsu Shiraki
Tokyo
JP
Agent
Laff Whitesel Conte & Saret
Assignee
Nippon Electric
JP
IPC
H01L 31/00
H01L 27/14
H01L 29/78
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