04477311 is referenced by 52 patents and cites 9 patents.

MOlecular beam epitaxy (MBE) requires that the surface of a substrate on which a semiconductor layer is formed by MBE be clean. Physical etching damages the substrate, while usual chemical etching damages vacuum pumps and contaminates MBE apparatuses. Hydrogen plasma etching can clean a substrate without damaging a substrate and a vacuum pump and without contaminating an MBE apparatus. Further, by combining MBE with formation of a protective layer without breaking the vacuum used in MBE, diffusion of an impurity in the semiconductor layer formed by MBE can be greatly decreased during a subsequent high-temperature heat treatment.

Title
Process and apparatus for fabricating a semiconductor device
Application Number
6/561967
Publication Number
4477311
Application Date
December 15, 1983
Publication Date
October 16, 1984
Inventor
Kouichiro Odani
Sagamihara
JP
Kohki Hikosaka
Yokohama
JP
Takashi Mimura
Machida
JP
Agent
Staas & Halsey
Assignee
Fujitsu
JP
IPC
C23C 13/08
B05D 5/12
H01L 7/36
H01L 21/306
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