04471405 is referenced by 34 patents and cites 8 patents.

A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.

Title
Thin film capacitor with a dual bottom electrode structure
Application Number
335136
Publication Number
4471405
Application Date
October 3, 1983
Publication Date
September 11, 1984
Inventor
Kris V Srikrishnan
Wappingers Falls
NY, US
James K Howard
Fishkill
NY, US
Agent
Mitchell S Bigel
Douglas A Lashmit
Assignee
International Business Machines Corporation
NY, US
IPC
B05D 5/12
H01L 29/78
H01G 1/01
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