04435446 is referenced by 10 patents and cites 1 patents.

Intrinsic polysilicon is used to seal the sidewalls of the active areas formed in a silicon substrate in an integrated circuit with no additional masking required over a standard local oxidation (LOCOS) process. Since polysilicon and silicon are compatible materials, a "bird's beak" free structure is produced with a minimum number of defects during subsequent processing.

Title
Edge seal with polysilicon in LOCOS process
Application Number
6/441593
Publication Number
4435446
Application Date
November 15, 1982
Publication Date
March 6, 1984
Inventor
Lenin Anne
Cupertino
CA, US
Alan D Marston
Los Altos
CA, US
Agent
Jeffery B Fromm
Assignee
Hewlett Packard Company
CA, US
IPC
H01L 21/76
View Original Source