04424525 is referenced by 125 patents and cites 4 patents.

A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. A channel constituted with this electron accumulation enjoys an excellent electron mobility, particularly at cryogenic temperatures. A layer configuration fabricated with two different semiconductors having different electron mobilities and a similar crystal lattice coefficient, and including a single heterojunction, is effective to improve electron mobility. Such a layer configuration can be employed for production of an active semiconductor device with high electron mobility, resulting in high switching speed. The semiconductor devices including a FET, a CCD, etc., exhibit an excellent transfer conductance Gm.

Title
High electron mobility single heterojunction semiconductor devices
Application Number
6/220968
Publication Number
4424525
Application Date
December 29, 1980
Publication Date
January 3, 1984
Inventor
Takashi Mimura
Machida
JP
Agent
Staas & Halsey
Assignee
Fujitsu
JP
IPC
H01L 29/78
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