04423087 is referenced by 25 patents and cites 5 patents.

A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.

Title
Thin film capacitor with a dual bottom electrode structure
Application Number
6/335136
Publication Number
4423087
Application Date
December 28, 1981
Publication Date
December 27, 1983
Inventor
Kris V Srikrishnan
Wappingers Falls
NY, US
James K Howard
Fishkill
NY, US
Agent
Mitchell S Bigel
Assignee
International Business Machines Corporation
NY, US
IPC
H01G 4/08
H01G 4/12
H01G 1/01
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