04393475 is referenced by 29 patents and cites 1 patents.

A nonvolatile semiconductor memory device formed of a plurality of memory cells arranged in a matrix pattern includes a plurality of reference cells, a reference voltage supply, and differential type sensing amplifiers connected to output lines of the memory cells and to an output line of the reference cells. In one embodiment the storage capability of each memory cell is tested by comparing the cell voltage to the reference voltage by selectively connecting the reference cell output line with the sensing amplifier associated with the column containing the cell under test. A memory cell is determined to be defective when the difference between the cell voltage and the reference voltage, that is, the output of the differential sensing amplifier, is below a predetermined value.

Title
Non-volatile semiconductor memory and the testing method for the same
Application Number
6/229027
Publication Number
4393475
Application Date
January 27, 1981
Publication Date
July 12, 1983
Inventor
Eisaburo Iwamoto
Tokyo
JP
Norihisa Kitagawa
Tokyo
JP
Agent
Melvin Sharp
Rhys Merrett
Douglas A Lashmit
Assignee
Texas Instruments Incorporated
TX, US
IPC
G11C 11/40
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