04388342 is referenced by 43 patents and cites 9 patents.

A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.

Title
Method for chemical vapor deposition
Application Number
6/154025
Publication Number
4388342
Application Date
May 28, 1980
Publication Date
June 14, 1983
Inventor
Takashi Aoyama
Hitachi
JP
Yosuke Inoue
Tokaimura
JP
Takaya Suzuki
Katsuta
JP
Agent
Antonelli Terry & Wands
Assignee
Hitachi
JP
IPC
B05D 5/12
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