04377857 is referenced by 47 patents and cites 2 patents.

An electrically erasable programmable read-only memory (E.sup.2 PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E.sup.2 PROM array consists of a single floating gate field effect transistor. The E.sup.2 PROM of the present invention provides for row erasure and single bit writing.

Title
Electrically erasable programmable read-only memory
Application Number
6/207859
Publication Number
4377857
Application Date
November 18, 1980
Publication Date
March 22, 1983
Inventor
Andrew C Tickle
Los Altos
CA, US
Agent
Theodore Scott Park
Michael J Pollock
Kenneth Olsen
Assignee
Fairchild Camera & Instrument
CA, US
IPC
G11C 11/40
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