04368524 is referenced by 25 patents and cites 6 patents.

A semiconductor device for comprising electrically alterable read-only memories formed in and on the same silicon substrate is disclosed. The read-only memories are driven by both a first voltage having one polarity and a second voltage having the opposite polarity. The first voltage is supplied from an external unipolar voltage source, but the second voltage is generated by a bipolar voltage generator which is located on the same silicon substrate and is driven by said external unipolar voltage source.

Title
Semiconductor device
Application Number
6/170175
Publication Number
4368524
Application Date
July 18, 1980
Publication Date
January 11, 1983
Inventor
Hideki Arakawa
Yokohama
JP
Kazuhisa Nakamura
San Jose
CA, US
Agent
Staas & Halsey
Assignee
Fujitsu
JP
IPC
G11C 7/00
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