04359490 is referenced by 56 patents and cites 5 patents.

A low temperature LPCVD process for co-depositing metal and silicon to form metal silicide on a surface such as the surface of a semiconductor integrated circuit wherein the metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium. A reactor which contains the surface is maintained at a temperature of about 500.degree.-700.degree. C. The reactor is purged by the successive steps of introducing an inert gas into the reactor, introducing a reducing atmosphere into the reactor and introducing hydrogen chloride gas into the reactor. Silane is then introduced into the reactor such that a base layer of polysilicon is formed on the surface. Then, while maintaining silane introduction to the reactor, metal chloride vapor is simultaneously introduced into the reactor such that metal and silicon are co-deposited on the polysilicon as metal silicide.

Title
Method for LPCVD co-deposition of metal and silicon to form metal silicide
Application Number
6/282768
Publication Number
4359490
Application Date
July 13, 1981
Publication Date
November 16, 1982
Inventor
William I Lehrer
Los Altos
CA, US
Agent
Michael J Pollock
Theodore Scott Park
Ken Olsen
Assignee
Fairchild Camera & Instrument
CA, US
IPC
H01L 21/285
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