04333814 is referenced by 27 patents and cites 5 patents.

The quality of a plasma etching process is improved by applying a DC potential (28') to one of the energizing electrodes (12') in the reaction chamber (11').The DC potential withdraws a small current from the plasma which causes the reaction to produce a uniform, controllable self-bias on the workpiece placed on the opposite (or second) electrode.

Title
Methods and apparatus for improving an RF excited reactive gas plasma
Application Number
6/107223
Publication Number
4333814
Application Date
December 26, 1979
Publication Date
June 8, 1982
Inventor
Birol Kuyel
Hopewell
NJ, US
Agent
A M Tobia
Assignee
Western Electric Company
NY, US
IPC
C23F 1/02
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