04330363 is referenced by 201 patents and cites 8 patents.

A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed nonepitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystallization from a single nucleation site and for suppressing the formation of competitive nucleation sites at their edges.

Title
Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
Application Number
6/182195
Publication Number
4330363
Application Date
August 28, 1980
Publication Date
May 18, 1982
Inventor
Marvin D Moyer
Cupertino
CA, US
Dirk J Bartlelink
Los Altos
CA, US
Noble M Johnson
Menlo Park
CA, US
David K Biegesen
Woodside
CA, US
Agent
Serge Abend
Assignee
Xerox Corporation
CT, US
IPC
C30B 13/06
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