04316791 is referenced by 25 patents and cites 5 patents.

Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove.

Title
Device for chemical dry etching of integrated circuits
Application Number
6/179788
Publication Number
4316791
Application Date
August 20, 1980
Publication Date
February 23, 1982
Inventor
Joseph Taillet
Boulogne
FR
Agent
Lowe King Price & Becker
Assignee
Office Nationale d Etudes et de Recherches Aerospatiales
FR
IPC
C23F 1/00
C23C 15/00
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