04300152 is referenced by 60 patents and cites 8 patents.

A CMOS integrated circuit structure which is not susceptible to latchup utilizes insulated-gate field-effect transistors having Schottky barrier source and drains (SB-IGFET). In the preferred embodiment, the n-channel device of an adjacent complementary pair of transistors in a CMOS circuit is provided with diffused source and drain while the p-channel device of the pair is provided with PtSi-Si Schottky barrier contact source and drain. Such a structure completely eliminates the parasitic pnpn structure which causes the latchup problem in conventional CMOS structures.

Title
Complementary field-effect transistor integrated circuit device
Application Number
6/138228
Publication Number
4300152
Application Date
April 7, 1980
Publication Date
November 10, 1981
Inventor
Martin P Lepselter
Summit
NJ, US
Agent
Arthur J Torsiglieri
Assignee
Bell Telephone Laboratories Incorporated
NJ, US
IPC
H01L 29/56
H01L 29/78
H01L 27/04
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