04300150 is referenced by 170 patents and cites 1 patents.

A lateral double-diffused MOS transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or on-resistance characteristics of the device. The field-shaping layer redistributes the electrical field in the device during operation in order to eliminate electrical field crowding in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a composite layer having both buried and surface layer portions.

Title
Lateral double-diffused MOS transistor device
Application Number
6/159883
Publication Number
4300150
Application Date
June 16, 1980
Publication Date
November 10, 1981
Inventor
Sel Colak
Briarcliff Manor
NY, US
Agent
Steven R Biren
Robert T Mayer
Thomas A Briody
Assignee
North American Philips Corporation
NY, US
IPC
H01L 29/72
View Original Source