04262631 is referenced by 166 patents and cites 4 patents.

An RF plasma deposition apparatus for depositing a film of material on substrates positioned in a vertical plane and electrically "floating" within the glow discharge. For deposition of silicon nitride films, the apparatus is adapted to introduce silane gas in a substantially uniform and laminar flow into a coating cavity containing substrates, a ground screen electrode, and a "hot" RF electrode, within which a glow discharge is ignited. Elemental nitrogen may be delivered to the coating cavity after being dissociated in a local, separate RF plasma called an "atomizer" cavity. During coating, elemental nitrogen combines with elemental silicon and deposits silicon nitride upon the substrate surface.

Title
Thin film deposition apparatus using an RF glow discharge
Application Number
6/80941
Publication Number
4262631
Application Date
October 1, 1979
Publication Date
April 21, 1981
Inventor
Ronald M Kubacki
10296 Alpine, #C, Cupertino, 95014
CA, US
Agent
Thomas E Schatzel
IPC
C23C 15/00
View Original Source