04242691 is referenced by 139 patents and cites 2 patents.

The disclosed MOS transistor includes a channel region formed of a lightly doped semiconductor layer disposed in a surface portion of a heavily doped semiconductor layer subsequently disposed on a lightly doped semiconductor substrate. The channel region may be of the identical or opposite conductivity type to the heavily doped semiconductor layer that has the same type conductivity as the substrate. Also the channel region may be of an intrinsic semiconductive material. A source and a drain region may be disposed in the lightly or highly doped layer. Alternatively the source and drain regions may reach the substrate.

Title
MOS Semiconductor device
Application Number
5/943812
Publication Number
4242691
Application Date
September 18, 1978
Publication Date
December 30, 1980
Inventor
Satoru Kawazu
Itami
JP
Norihiko Kotani
Itami
JP
Agent
Wenderoth Lind & Ponack
Assignee
Mitsubishi Denki Kabushiki Kaisha
JP
IPC
H01L 29/78
View Original Source