04231149 is referenced by 60 patents and cites 3 patents.

A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.

Title
Narrow band-gap semiconductor CCD imaging device and method of fabrication
Application Number
5/950191
Publication Number
4231149
Application Date
October 10, 1978
Publication Date
November 4, 1980
Inventor
Michael A Kinch
Dallas
TX, US
Dennis D Buss
Richardson
TX, US
Richard A Chapman
Dallas
TX, US
Agent
Mel Sharp
Richard Donaldson
Gary C Honeycutt
Assignee
Texas Instruments Incorporated
TX, US
IPC
B01J 17/00
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