04226898 is referenced by 272 patents and cites 6 patents.

A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises depositing on a substrate a solid amorphous semiconductor film including at least one element, by glow discharge decomposition of a compound containing said at least one element and at least one alterant element in an atmosphere separately containing at least one different alterant element, wherein the plurality of different alterant elements comprise at least fluorine and are incorporated in said amorphous semiconductor film during the deposition thereof yielding an altered amorphous semiconductor material having reduced density of localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell application are obtained and modifiers or dopants can be effectively added to produce p-type or n-type amorphous semiconductor films so that the films function like similar crystalline semiconductors.

Title
Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
Application Number
5/887353
Publication Number
4226898
Application Date
March 16, 1978
Publication Date
October 7, 1980
Inventor
Arun Madan
Rochester
MI, US
Stanford R Ovshinsky
Bloomfield Hills
MI, US
Agent
Wallenstein Spangenberg Hattis & Strampel
Assignee
Energy Conversion Devices
MI, US
IPC
H01L 45/00
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