04222838 is referenced by 20 patents and cites 5 patents.

In a preferred embodiment, the etch rate of a silicon-containing surface subjected to a RF discharge plasma containing reactive etching species is selectively affected by electrically insulating the surface from the plasma-generating RF power source and by applying to the surface a predetermined time-constant electrical potential. The applied potential apparently interacts with the plasma constituents in the immediate vicinity of the surface to alter the concentration of reactive species and thereby change the rate of attack of the plasma upon the surface. The applied potential, depending upon its polarity and strength, is useful to selectively increase or decrease the etch rate of the desired surface exposed to a predetermined plasma without significantly interfering with the overall RF plasma discharge.

Title
Method for controlling plasma etching rates
Application Number
5/915149
Publication Number
4222838
Application Date
June 13, 1978
Publication Date
September 16, 1980
Inventor
Martin C Steele
Bloomfield Hills
MI, US
Jayant K Bhagat
Troy
MI, US
Agent
Douglas D Fekete
Assignee
General Motors Corporation
MI, US
IPC
C23F 1/00
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