04217375 is referenced by 20 patents and cites 12 patents.

A method of depositing doped silicon dioxide layers in the fabrication of semiconductor devices has been found. This method entails the reaction of a mixture of silane, nitrous oxide and a source of a dopant, e.g., phosphine or diborane. The reaction is performed at relatively high temperature, typically between 800 and 900 degrees C., and excellent step coverage is obtained. Further, the pinhole problems previously associated with high temperature techniques are avoided. Lower dopant concentrations, e.g., below 6%, are also practical.

Title
Deposition of doped silicon oxide films
Application Number
5/829188
Publication Number
4217375
Application Date
August 30, 1977
Publication Date
August 12, 1980
Inventor
Arthur C Adams
Berkeley Heights
NJ, US
Agent
Bruce S Schneider
Assignee
Bell Telephone Laboratories Incorporated
NJ, US
IPC
H01L 21/18
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