04215156 is referenced by 107 patents and cites 15 patents.

A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.

Title
Method for fabricating tantalum semiconductor contacts
Application Number
5/827912
Publication Number
4215156
Application Date
August 26, 1977
Publication Date
July 29, 1980
Inventor
Hans Wimpfheimer
Poughkeepsie
NY, US
Lucian A Kasprzak
Hopewell Junction
NY, US
Majid Ghafghaichi
Poughkeepsie
NY, US
Hormazdyar M Dalal
Wappingers Falls
NY, US
Agent
Thomas F Galvin
David M Bunnell
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/477
H01L 21/443
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