04214919 is referenced by 28 patents and cites 9 patents.

A particular embodiment involves the oxidation of hot monolithic silicon circuit substrates to grow thin silicon dioxide films (<500 A.degree. thick) free of "nitrogenous micro-defects", using pre-oxidation and post-oxidation sequences where the Nitrogen content (as the atmosphere) is reduced, if not eliminated, to avoid problems created by such micro-defects, especially degradation of breakdown voltage across the oxide. N.sub.2 is preferably replaced by Argon which generates no such micro-defects.

Title
Technique of growing thin silicon oxide films utilizing argon in the contact gas
Application Number
5/973928
Publication Number
4214919
Application Date
December 28, 1978
Publication Date
July 29, 1980
Inventor
William C Young
Ramona
CA, US
Agent
Kevin R Peterson
Nathan Cass
John J McCormack
Assignee
Burroughs Corporation
MI, US
IPC
H01L 21/469
H01L 21/31
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