04168442 is referenced by 14 patents and cites 9 patents.

A CMOS FET device which comprises an N type semiconductor substrate; a P type well layer formed in the N type semiconductor substrate; a p-channel type MOS transistor provided in the N type semiconductor substrate; an n-channel type MOS transistor formed in the P type well layer; and a noise-absorbing capacitor provided at the input or output terminal of the MOS transistor or at a power supply section.

Title
CMOS FET device with abnormal current flow prevention
Application Number
705998
Publication Number
4168442
Application Date
May 23, 1978
Publication Date
September 18, 1979
Inventor
Yasoji Suzuki
Kanagawa
JP
Mitsuhiko Ueno
Fujisawa
JP
Kazuo Satou
Yokohama
JP
Agent
Finnegan Henderson Farabow & Garrett
Assignee
Tokyo Shibaura Electric
JP
IPC
H01L 29/78
H03K 17/60
H03K 17/16
H03K 3/353
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