04154625 is referenced by 22 patents and cites 4 patents.

Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.

Title
Annealing of uncapped compound semiconductor materials by pulsed energy deposition
Application Number
5/851846
Publication Number
4154625
Application Date
November 16, 1977
Publication Date
May 15, 1979
Inventor
Thirumalai N C Venkatesan
Highland Park
NJ, US
Jene A Golovchenko
Basking Ridge
NJ, US
Agent
Peter V D Wilde
Assignee
Bell Telephone Laboratories Incorporated
NJ, US
IPC
H01L 21/26
H01L 21/268
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