04110488 is referenced by 39 patents and cites 7 patents.

A plurality of Schottky barrier devices are produced by a method which uses a relationship between barrier height, surface concentration of impurities, and alloying time valid when a thin layer of oxide is present on a device substrate and includes the steps of preselecting an impurity concentration for the principal surface of a plurality of silicon substrates and using a predetermined alloying time for each substrate to achieve a preselected barrier height.

Title
Method for making Schottky barrier diodes
Application Number
5/675638
Publication Number
4110488
Application Date
April 9, 1976
Publication Date
August 29, 1978
Inventor
John J Risko
Cranbury
NJ, US
Agent
D S Cohen
R P Williams
H Christoffersen
Assignee
RCA Corporation
NY, US
IPC
H01L 29/48
H01L 21/66
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