04100310 is referenced by 31 patents and cites 8 patents.

In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.

Title
Method of doping inpurities
Application Number
5/648943
Publication Number
4100310
Application Date
January 14, 1976
Publication Date
July 11, 1978
Inventor
Masayoshi Nomura
Hachioji
JP
Yosuke Inoue
Tokai
JP
Takaya Suzuki
Hitachi
JP
Takuzo Ogawa
Hitachi
JP
Mitsuru Ura
Hitachi
JP
Agent
Craig & Antonelli
Assignee
Hitachi
JP
IPC
B05D 5/12
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