04094008 is referenced by 33 patents and cites 3 patents.

A novel memory array is disclosed, the array utilizing a matrix of variable threshold insulated gate field effect transistor cells. The cells are comprised solely of a gate region, having nitride and oxide layers, and a source region with the output data sensed, at the source, as a change of source charge as distinguished from the prior art sensing of a change of low impedance source voltage. In operation, each cell functions as an alterable capacitor. A negative pulse applied to the gate selects the cell. Variations in stored charge at the nitride-oxide interface causes changes in the threshold voltage and effective capacitance of the cell. The source charge may then be sensed to read the stored data.

Title
Alterable capacitor memory array
Application Number
5/697602
Publication Number
4094008
Application Date
June 18, 1976
Publication Date
June 6, 1978
Inventor
Nicholas E Aneshansley
Centerville
OH, US
George C Lockwood
Dayton
OH, US
Agent
Lowell C Bergstedt
J T Cavender
Assignee
NCR Corporation
OH, US
IPC
G11C 11/40
G11C 11/24
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